The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

An edition of The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon (1981)

The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

By W. Robert Thurber

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Publish Date

1981

Publisher

U.S. Dept. of Commerce, National Bureau of Standards,For sale by the Supt. of Docs., U.S. G.P.O.

Language

eng

Pages

Description:

subjects: Silicon, Semiconductor doping, Electric resistance, Electron mobility, Defects, Boron, Phosphorus