The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

An edition of The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon (1977)

The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

By Sheng S. Li

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Publish Date

1977

Publisher

U.S. Dept. of Commerce, National Bureau of Standards ; for sale by the Supt. of Docs., U.S. Govt. Print. Off.

Language

eng

Pages

Description:

subjects: Electric properties, Electric resistance, Electron mobility, Semiconductor doping, Silicon