Ka-band GaAs FET monolithic power amplifier development

An edition of Ka-band GaAs FET monolithic power amplifier development (1997)

Ka-band GaAs FET monolithic power amplifier development

[contract no. NAS3-24239]

By Paul Saunier

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Publish Date

1997

Publisher

National Aeronautics and Space Administration,National Technical Information Service, distributor

Language

eng

Pages

-

Description:

subjects: Field effect transistors, Aluminum gallium arsenides, High electron mobility transistors, Power amplifiers, Microwave circuits, Molecular beam epitaxy, Indium gallium arsenides, Integrated circuits