Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3
An edition of Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 (2007)
new materials, processes and equipment
By International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS (3rd 2007 Chicago, Ill.)
Publish Date
2007
Publisher
Electrochemical Society
Language
eng
Pages
470
Description: