An edition of Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes (1989)

Noise properties of InGaAs/InAlAs multiquantum-well heterostructure p-i-n photodiodes

By Young-June Yu

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Publish Date

1989

Publisher

Language

eng

Pages

203

Description:

subjects: Charge transfer, Noise, Semiconductor Diodes, Indium aluminum arsenide, Measurement, Indium gallium arsenide, Avalanche Diodes