An edition of Ferroelectric-Gate Field Effect Transistor Memories (2016)
Ferroelectric-Gate Field Effect Transistor Memories
Device Physics and Applications
By Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
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Publish Date
2016
Publisher
Springer London, Limited
Language
eng
Pages
402
Description:
subjects: Ferroelectricity, Field effect transistors