An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits

An edition of An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits (2005)

An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits

By Iwan Schnyder

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Publish Date

2005

Publisher

Hartung-Gorre Verlag

Language

eng

Pages

267

Description:

subjects: Bipolar transistors, Design and construction, Indium phosphide, Transistors