Design of Shallow p-type Dopants in ZnO (Presentation)
An edition of Design of Shallow p-type Dopants in ZnO (Presentation) (2008)
By Su-Huai Wei
Publish Date
2008
Publisher
United States. Dept. of Energy,distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Language
eng
Pages
32
Description:
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
subjects: Semiconductor doping, Doped semiconductors, Crystals, Defects