Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication

An edition of Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication (1980)

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication

By D. R. Myers

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Publish Date

1980

Publisher

U.S. Dept. of Commerce, National Bureau of Standards,for sale by the Supt. of Docs., U.S. Govt. Print. Off.

Language

eng

Pages

Description:

subjects: Defects, Neutron transmutation Semiconductor doping, Power semiconductors, Silicon, Thyristors, Semiconductor doping, Neutron irradiation