High performance InP-based HEMTs with dry etched gate recess

An edition of High performance InP-based HEMTs with dry etched gate recess (1998)

High performance InP-based HEMTs with dry etched gate recess

By Halit C. Duran

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Publish Date

1998

Publisher

Hartung-Gorre Verlag

Language

eng

Pages

127

Description:

subjects: Modulation-doped field-effect transistors