Electrical properties of silicon doped by ion implantation

An edition of Electrical properties of silicon doped by ion implantation (1968)

Electrical properties of silicon doped by ion implantation.

By Finn Palmgren Jensen

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Publish Date

1968

Publisher

Physics Laboratory III, Technical University of Denmark]

Language

eng

Pages

122

Description:

subjects: Silicon crystals, Annealing of crystals, Electric properties