An edition of SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (2007)

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

By John D. Cressler

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Publish Date

2017

Publisher

Taylor & Francis Group

Language

eng

Pages

264

Description:

subjects: Silicon, Materials, Epitaxy, Electric properties, Bipolar transistors, Heterostructures, Transistors, Transistors bipolaires, Matériaux, Hétérostructures, Épitaxie, TECHNOLOGY & ENGINEERING, Electronics