

An edition of Ferroelectric-Gate Field Effect Transistor Memories (2016)
Device Physics and Applications
By Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publish Date
2021
Publisher
Springer Singapore Pte. Limited
Language
eng
Pages
402
1-6 of 6 Editions
Ferroelectric-Gate Field Effect Transistor Memories
Language: eng
Published In: 2021
Publisher: Springer Singapore Pte. Limited
Ferroelectric-Gate Field Effect Transistor Memories
Language: eng
Published In: 2016
Publisher: Springer London, Limited
Pages: 440
Published In: Mar 27, 2020
Publisher: Springer
Pages: 439
Published In: Mar 24, 2020
Publisher: Springer
Pages: 365
Published In: Jun 15, 2018
Publisher: Springer
Pages: 365
Published In: Sep 15, 2016
Publisher: Springer