Defects in silicon induced by high temperature treatment and their influence on MOS-devices

An edition of Defects in silicon induced by high temperature treatment and their influence on MOS-devices (1994)

Defects in silicon induced by high temperature treatment and their influence on MOS-devices

a thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences

By Michael Dammann

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Publish Date

1994

Publisher

Physical Electronics Laboratory, Swiss Federal Institute of Technology

Language

eng

Pages

Description:

subjects: Defects, Silicon, Effect of temperature on, Silicon crystals, Semiconductor switches, Metal oxide semiconductors