Defects in silicon induced by high temperature treatment and their influence on MOS-devices
An edition of Defects in silicon induced by high temperature treatment and their influence on MOS-devices (1994)
a thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences
By Michael Dammann
Publish Date
1994
Publisher
Physical Electronics Laboratory, Swiss Federal Institute of Technology
Language
eng
Pages
95