Electronic characterization of defects in narrow gap semiconductors

An edition of Electronic characterization of defects in narrow gap semiconductors (1994)

Electronic characterization of defects in narrow gap semiconductors

comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995

By James D. Patterson

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Publish Date

1995

Publisher

National Aeronautics and Space Administration,National Technical Information Service, distributor

Language

eng

Pages

Description:

subjects: Crystal defects, Electron energy, Energy levels, Energy of formation, Impurities, Interstitials, Mercury cadmium tellurides, Mercury tellurides, Semiconductors (Materials), Vacancies (Crystal defects), Zinc selenides, Zinc tellurides